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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1942 DESCRIPTION With TO-3PL package Complement to type 2SC5199 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -160 -160 -5 -12 -1.2 UNIT V V V A A W ae ae Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 120 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SA1942 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -160 V VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -2.5 V VBE Base-emitter voltage IC=-6A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-160V; IE=0 -5 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -5 |I A hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain fT Transition frequency O IC=-6A ; VCE=-5V 35 IC=-1A ; VCE=-5V COB Collector output capacitance hFE-1 classifications R 55-110 HAN INC 80-160 SEM GE IE=0; f=1MHz;VCB=-10V OND IC TOR UC 30 320 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1942 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.50 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1942 SEM GE HAN INC OND IC TOR UC 4 |
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